International Journal of Advances in Electrical Engineering
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P-ISSN: 2708-4574, E-ISSN: 2708-4582

International Journal of Advances in Electrical Engineering


2022, Vol. 3, Issue 2, Part A
On approach to optimize manufacturing of field-effect heterotransistors framework circuit of a combinational series-shunt switch to increase their integration rate: Influence mismatch-induced stress


Author(s): EL Pankratov

Abstract: In this paper we introduce an approach to increase density of field-effect transistors in the framework of a circuit of a combinational series-shunt switch. In the framework of the approach we consider manufacturing the switch in a heterostructure with specific configuration. Several required areas of the heterostructure should be doped by diffusion or ion implantation. After that dopant and radiation defects should by annealed framework optimized scheme. We also consider an approach to decrease value of mismatch-induced stress in the considered heterostructure. We introduce an analytical approach to analyze mass and heat transport in heterostructures during manufacturing of integrated circuits with account mismatch-induced stress.

Pages: 83-104 | Views: 48 | Downloads: 18

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How to cite this article:
EL Pankratov. On approach to optimize manufacturing of field-effect heterotransistors framework circuit of a combinational series-shunt switch to increase their integration rate: Influence mismatch-induced stress. Int J Adv Electr Eng 2022;3(2):83-104.
International Journal of Advances in Electrical Engineering