International Journal of Advances in Electrical Engineering
2022, Vol. 3, Issue 1, Part A
On approach to increase integration rate of elements of a CMOS full-wave rectifier
Author(s): EL Pankratov
Abstract: In this paper we introduce an approach to increase integration rate of elements of a CMOS full-wave rectifier. In the framework of the approach we consider a heterostructure with special configuration. Several specific areas of the heterostructure should be doped by diffusion or ion implantation. Annealing of dopant and/or radiation defects should be optimized.
Pages: 71-79 | Views: 891 | Downloads: 383
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How to cite this article:
EL Pankratov. On approach to increase integration rate of elements of a CMOS full-wave rectifier. Int J Adv Electr Eng 2022;3(1):71-79.
